1

Properties of Si:H thin films deposited by rf-PECVD of silane - argon mixtures with variation of the plasma condition

P. P. Ray, N. D. Gupta, P. Chaudhuri, D. L. Williamson, S. Vignoli and C. Longeaud

J. Non-Cryst. Solids, 299-302, 123, 2002

1

Properties of Si:H thin films deposited by rf-PECVD of silane - argon mixtures with variation of the plasma condition

P. P. Ray, N. D. Gupta, P. Chaudhuri, D. L. Williamson, S. Vignoli and C. Longeaud

J. Non-Cryst. Solids, 299-302, 123, 2002

2

Role of interstitial hydrogen and voids in light induced metatstable defect formation in hydrogenated amorphous silicon : a model

C. Longeaud, D. Roy and O. Saadane

Phys. Rev. B 65, 085206, 2002

3

Mediation of light-induced metastable defect formation in hydrogenated amorphous silicon by interstitial hydrogen and voids

C. Longeaud

Journal of Optoelectronics and Advanced Materials Vol.4, 461, 2002

4

Calculation of the precursor flux from optical emission spectroscopy data in plasma enhanced chemical vapour deposition of silane and its correlation with the deposition rate

P. P. Ray, N. Dutta Gupta and P.Chaudhuri

Jap. J. Appl. Phys. (accepted)

5

Study of radio frequency plasma of silane ­argon mixture by optical emission spectroscopy

P. P. Ray and P. Chaudhuri

Czechoslovak Journal of Physics, 50 Suppl. S3 349, 2002

6

Use of optical emission spectroscopy to monitor the silane - argon plasma

P. P. Ray and P. Chaudhuri

Ind. J. Phys., 76B, 319, 2002

7

Optical Emission Spectroscopy Used to Study the Characteristics of the Capacitive Radio Frequency Discharge in Argon

P. P. Ray and P. Chaudhuri

Czech Journal of Physics (accepted for publication).

8

Explanation of the structural changes in the Si:H thin films by monohydride cluster formation

N. Dutta Gupta and P. Chaudhuri

J. Phys. D (accepted for publication)

9

Properties of silicon films deposited under argon dilution

C. Longeaud, D. Roy, P. Chaudhuri, N. Dutta Gupta, P. Pratim Ray, S. Vignoli, R. Meaudre, M. Meaudre and L. Saviot

Mat. Res. Soc. Symp. Proc. Vol. 664, 2001

10

Is interstitial hydrogen playing a role in the Staebler-Wronski effect ?

C. Longeaud and D. Roy

Mat. Res. Soc. Symp. Proc. Vol. 664 A.14.4.1- A.14.4.6, 2001

11

Effect of oxygen contamination on the properties of the silicon hydrogen alloy materials deposited under conditions near the microcrystalline silicon formation region

Namita Dutta Gupta, Partha Chaudhari

Journal of Non-Crystalline Solids 289 (2001) 168-174, 2001

12

Hydrogenated amorphous silicon films with low defect density prepared by argon dilution: application to solar cells

P.P. Ray, P. Chaudhuri and P. Chatterjee

Thin Solid Films 403–404, 275–279, 2002